BUK9515-60E datasheet

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О ДАТАШИТЕ

• Маркировка
  BUK9515-60E
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK9515-60E Mfr Package Description: PLASTIC, SC-46, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Finish: TIN Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 54 A DS Breakdown Voltage-Min: 60 V Avalanche Energy Rating (Eas): 39 mJ Drain-source On Resistance-Max: 0.0150 ohm Pulsed Drain Current-Max (IDM): 216 A
• Количество страниц
  13 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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